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TOSHIBA

TOSHIBAIGBT is short for Insulated Gate Bipolar Transistor. It is a power transistor with a MOS structure for an input part and a bipolar one for an output part. Suitable for high voltage and high current, it is capable of controlling high power with less drive power. Its applications include induction heating cooking equipment.
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Toshiba IGBT Modules
GT8Q101
GT15Q101
GT25Q101
GT50J101
GT50J102
GT60M301
MG8N6ES42
MG8Q6ES42
MG8 Q6ES1
MIG10J902H
MG15G1AL3
MG15Q6ES1
MG15Q6ES42
MG25J2YS40
MG25J2YS91
MG25J6 ESI
....
Toshiba Mosfet & IPM
-- MOSFET --
MG15G4GM1

-- IPM --
MIG15J805H
MIG15Q901H
Toshiba Darlington
MG10G6ELI
MG15G6ELI
MG15N6EKI
MG20Q6EKI
MG20G6EL1/ 2
MIG20J103H
MIG20J901
MIG20J902H
MIG25Q901H
MIG25Q906H
MG25J2YS9
MG25M1BKI
MG25N6EKI
MG25Q1BS1
MG25Q2YS91
....
Toshiba Diode
30Q6P42
100U6P41
110Q2G43

TOSHIBA DIODE
3 Phrase Diode
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